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Published Papers

B. Saha, J. Celaya, K. Goebel, and P. Wysocki, "Towards Prognostics for Electronics Components," in IEEE AEROSPACE, 2009.

G. Sonnenfeld, K. Goebel, and J. R. Celaya, "An agile accelerated aging, characterization and scenario simulation system for gate controlled power transistors," in AUTOTESTCON, 2008 IEEE, 2008, pp. 208-215.

A. Ginart, M. J. Roemer, P. W. Kalgren, and K. Goebel, "Modeling aging effects of IGBTs in power drives by ringing characterization," in International Conference on Prognostics and Health Management, 2008, pp. 1-7.

P. Lall, C. Bhat, M. Hande, V. More, R. Vaidya, J. Suhling, R. Pandher, K. Goebel, "Latent Damage Assessent and Prognostication of Residual Life in Airborne Lead-Free Electronics Under Thermo-Mechanical Loads", accepted for publication in Proceedings of International Conference on Prognostics and Health Management 2008.

N. Patil, D. Das, K. Goebel, and M. Pecht, "Identification of failure precursor parameters for Insulated Gate Bipolar Transistors (IGBTs)," in International Conference on Prognostics and Health Management, 2008, pp. 1-5.

N. Patil, D. Das, K. Goebel, and M. Pecht, "Failure Precursors for Insulated Gate Bipolar Transistors (IGBTs)", accepted for publication in Proceedings of International Conference on Prognostics and Health Management 2008.

P. Lall, C. Bhat, M. Hande, V. More, R. Vaidya, J. Suhling, R. Pandher, K. Goebel, "Interrogation of System State for Damage Assessment in Lead-free Electronics Subjected to Thermo-Mechanical Loads", Proceedings of 58th ECTC, pp. 918-929.

References

Z. Guangfan, D. Das, R. Xu, and M. Pecht, "IDDQ trending as a precursor to semiconductor failure," in International Conference on Prognostics and Health Management, 2008, pp. 1-7.

Y. Xiong and X. Cheng, "Prognostic and Warning System for Power-Electronic Modules in Electric, Hybrid Electric, and Fuel-Cell Vehicles," IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS, vol. 55, JUNE 2008.

G. Jie, M. H. Azarian, and M. G. Pecht, "Failure prognostics of multilayer ceramic capacitors in temperature-humidity-bias conditions," in International Conference on Prognostics and Health Management, 2008, pp. 1-7.

J. W. Simons and D. A. Shockey, "Prognostics modeling of solder joints in electronic components," in Aerospace Conference, 2006 IEEE, 2006, p. 6 pp.

W. Wu, M. Held, P. Jacob, P Scacco, and A. Birolini, "Thermal Stress Related Packaging Failure in Power IGBT Modules", Proceedings of 1995 International Symposium on Power Semiconductor Devices & ICs, Yokohama, pp. 330-334, 1995.

A. Morozumi, K. Yamada, T. Miyasaka, S.Sumi, and Y. Seki, “Reliability of Power Cycling for IGBT Power Semiconductor Modules”, IEEE Transactions on Industry Applications, Vol. 39, No. 3, pp. 665-671, 2003.

J. Thébaud, E. Woirgard, C. Zardini, S. Azzopardi, O. Briat, and J. Vinassa, “Strategy for Designing Accelerated Aging Tests to Evaluate IGBT Power Modules Lifetime in Real Operation Mode”, IEEE Transactions on Components and Packaging Technologies, Vol. 26, No. 2, pp. 429-438, 2003.

D. Katsis and D. Wyk, ”Void-Induced Thermal Impedance in Power Semiconductor Modules: Some Transient Temperature Effects”, IEEE Transactions on Industry Applications, Vol. 39, No. 5, pp. 1239-1246, 2003.

G. Buh, H. Chung, and Y. Kuk, “Real-Time evolution of trapped charge in a SiO2 layer: An electrostatic force”, Applied Physics Letters, Vol. 79, No. 13, pp. 2010-2012, 2001.

N. Lifshitz, and G. Smolinsky, “Hot-Carrier Aging of the MOS Transistor in the Presence of Spin-on Glass as the Inter level Dielectric”, IEEE Electron Device Letters, Vol. 12, No. 3, March 1991, pp. 140-142, 1991.

E. Ameraseka, and F. Najm, Failure Mechanisms in Semiconductor Devices, 2nd Edition, John Wiley & Sons Ltd, 1998.

D. L. Goodman, “Prognostic methodology for deep submicron semiconductor failure modes,” IEEE Trans. on Components and Packaging Technologies, vol. 24, no. 1, March 2001.

J. H. Stathis, B.P. Linder, K. L. Pey, F. Palumbo, C. H. Tung, “Dielectric Breakdown Mechanisms in Gate Oxides”, Journal of Applied Physics, Vol. 98, 121301, 2005.

R. Orsagh, D. Brown, M. Roemer, T. Dabney and T. Hess, “Prognostic Health Management for Avionics System Power Supplies”, Proceedings of 2005 IEEE Aerospace Conference, 2005.

F. Reynolds, “Thermally Accelerated Aging Of Semiconductor Components”, Proceeding of the IEEE, Vol. 62, No. 2, 1974.

C. Diaz; “Automation of Electrical Overstress Characterization for Semiconductor Devices”, Hewlett-Packard Journal, October 1994, pp. 106-111, 1994.

M. Trivedi, and K. Shenai, “Failure Mechanisms of IGBT’s Under Short-Circuit and Clamped Inductive Switching Stress”, IEEE Transactions on Power Electronics, Vol. 14, No. 1, 1999.

A. Ayten Kuntman, A. Ardalı, H. Kuntman, and F. Kacar, ”A Weibull Distribution-Based New Approach To Represent Hot Carrier Degradation in Threshold Voltage of MOS Transistors”, Solid-State Electronics, Vol. 48, pp. 217-223, 2004.

J. Segal, “Models of Scientific Software Development”, Proc. 2008 Workshop Software Eng. in Computational Science and Eng. 2008. www.cse.msstate.edu/~SECSE08/Papers/Segal.pdf.

D. Thomas, “Agile Programming: Design to accommodate change”, IEEE Software, Vol. 23, Vol. 3, 1995.

E. Gamma, R. Helm, R. Johnson, and J. Vlissides, Design Patterns: Elements of Reusable Object-Oriented Software, Addison-Wesley, 1995.

IGBT Faults and Failures

W. Wu, M. Held, P. Jacob, P. Scacco, and A. Birolini, "Thermal Stress Related Packaging Failure in Power IGBT Modules," Proceedings of the 7th International Symposium: Power Semiconductor Devices and ICs, 1995, pp. 330-334.

M. Held, P. Jacob, G. Nicoletti, P. Scacco, and M. Poech, "Fast Power Cycling Test for IGBT Modules in Traction Application," Proceedings from the International Conference in Power Electronics and Drive Systems, 1997, vol. 1, pp. 425-430.

M. Trivedi, K. Shenai, "Investigation of the short-circuit performance of an IGBT,"IEEE Trans. Electron Devices, vol. 45, issue 1, pp. 313-320, Jan. 1998.

R. Lorfevre, E. Dachs, C. Detcheverry, C. Palau, J. Gasiot, J. Roubaud, F. Calvet, M. Ecoffet, "Heavy ion induced failures in a power IGBT," IEEE Trans. Nuclear Science, vol. 44, issue 6, part 1, pp. 2353-2357, Dec 1997.

M.T. Rahimo, "A comprehensive study of failure mode in IGBT applications due tofreewheeling diode snappy recovery," The IEEE Industry Applications Conference, 1998, vol 2, pp. 840-847.

M. Trivedi, K. Shenai, "Failure mechanisms of IGBTs under short-circuit and clampedinductive switching stress," IEEE Trans. on Power Electronics, vol 14, pp. 108-116, Jan 1999.

I. Takata, "Non Thermal Destruction Mechanisms of IGBTs in Short Circuit Operation," Proceedings of the 14th International Symposium on Power Semiconductor Devices and ICs, 2002, pp. 173- 176.

M. Francis, R. Soldano, "A new SMPS nonpunch thru IGBT replace MOSFET in SMPS high frequency applications," Applied Power Electronics Conference and Exposition, 2003. vol. 2, pp. 953-957.

A. Morozumi, K. Yamada, T. Miyasaka, S. Sumi, Y. Seki, "Reliability of power cycling for IGBT power semiconductor modules," IEEE Trans. on Industry Applications, vol. 39, issue 3, May-June 2003.

R. Orsagh, D. Brown, M. Roemer, T. Dabnev, A. Hess, "Prognostic Health Management for Avionics System Power Supplies," IEEE Aerospace Conference, 2005, pp 3585- 3591.

H. Ye, M. Lin, C. Basaran, "Failure modes and FEM analysis of power electronic packaging," Finite Elements in Analysis and Design, vol. 38, no. 7, pp. 601-612. May 2002.

International Rectifier Technical Staff, Insulated Gate Bipolar Transistor Designer's Manual, International Rectifier, El Segundo, CA 90245.

IGBT Modeling

N. Protiwa, F. Apeldoorn, O. Groos, "New IGBT model for PSPICE," Fifth European Conference on Power Electronics and Applications, 1993, vol 2, pp. 226-231.

Z. Shen, T.P. Chow, "An analytical IGBT model for power circuit simulation," Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs, 1991, pp 79-82.

A.R. Hefner, "Analytical modeling of device-circuit interactions for the Power Insulated gate bipolar transistor (IGBT)," IEEE-Industry Applications, vol. 26, issue 6, pp. 995-1005, 1990.

A.R. Hefner, "A dynamic electro-thermal model for the IGBT," IEEE-Industry Applications, vol. 30, issue 2, pp. 394-405, Mar/Apr 1994.

J.M. Li, D. Lafore, J. Arnould, B. Reymond, "Analysis of switching behavior of the power insulated gate bipolar transistor by soft modeling," Fifth European Conference on Power Electronics and Applications, 1993, vol. 2, pp 220-225.

A.F. Petrie, C. Hymowitz, "A SPICE model for IGBTs," Applied Power Electronics Conference and Exposition, 1995, vol. 1, pp 147-152.

W. Wuchen, M. Held, P. Jacob, P. Scacco, A. Birolini, "Investigation on the long term reliability of power IGBT modules," Proceedings of the 7th International Symposium on Power Semiconductor Devices and ICs, 1995, pp 443-448.

K. Sheng, S.J. Finney, B.W. Williams, "Fast and accurate IGBT model for PSpice," Electronics Letters, vol. 32, issue 25, Dec 1996.

Y. Yue, J.J. Liou, I. Batarseh, "A steady-state and transient IGBT model valid for all free-carrier injection conditions," Solid-State Electronics, vol. 1, pp 168-174, Feb 1997.

A.R. Hefner, "Device Models, Circuit Simulation, And Computer-controlled Measurements For The IGBT," IEEE Workshop on Computers in Power Electronics, 1990, pp 233-243.

S.C. Yuan, C.C. Zhu, "IGBT SPICE model with nondestructive parameters extraction and measured verification," IEEE Proceedings in Electric Power Applications, 2003, vol 150, issue 5, pp 575 - 579.

P.O. Lauritzen, G.K. Andersen, M. Helsper, "A basic IGBT model with easy parameter extraction," Power Electronics Specialists Conference, 2001, vol 4, pp 2160 - 2165.

K. Sheng, B.W. Williams, S.J. Finney, "A Review of IGBT Models," IEEE Transactions on Power Electronics, vol 15, issue 6, Nov. 2000.

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